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Persistent URL http://purl.org/net/epubs/work/10673128
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Record Id 10673128
Title Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
Abstract Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
Organisation CLF , CI , STFC
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Language English (EN)
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Journal Article Phys Rev Lett 111, no. 9 (2013): 095001. doi:10.1103/PhysRevLett.111.095001 2013