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Persistent URL http://purl.org/net/epubs/work/30255
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Record Id 30255
Title Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile
Abstract A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.
Organisation CCLRC , SND , MEIS
Keywords Physics
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Language English (EN)
Type Details URI(s) Local file(s) Year
Journal Article Phys Rev B 65 (2002): 113412. doi:10.1103/PHYSREVB.65.113412 2002
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