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Persistent URL http://purl.org/net/epubs/work/34134
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Record Id 34134
Title Current-induced chain migration in semiconductor polymer blends
Abstract We have used the technique of neutron reflectometry in order to evaluate the changes that occur within polymer light-emitting devices as they are operated. The devices examined consisted of an indium-tin-oxide, anode, a deuterated-polysstyrene sulfonated/polys3,4 ethylenedioxythiophened, sd-PSS/PEDTd, charge injection layer, polysfluorened, sF8d, and a low work-function cathode.We found clear evidence for segregation of d-PSS to the d-PSS:PEDT/F8 interface in a device driven until its brightness had fallen to 10% of its initial value. We suggest that this effect is due to Joule heating of the device during operation.
Organisation CCLRC , ISIS , ISIS-CRISP
Keywords Physics , Migration , Polymer , Current Induced , Blends , ISIS 2005
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Language English (EN)
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Journal Article Phys Rev B 71 (2005): 081308. doi:10.1103/PhysRevB.71.081308 2005