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Persistent URL	http://purl.org/net/epubs/work/61989892
Record Status	Checked
Record Id	61989892
Title	Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs
Contributors	K Niskanen, A Javanainen, H Kettunen, C Cazzaniga (STFC Rutherford Appleton Lab.), M Kastriotou (STFC Rutherford Appleton Lab.), C Frost (STFC Rutherford Appleton Lab.)
Abstract
Organisation	ISIS , STFC , ISIS-CHIPIR
Keywords	stress , qualifications , logic gates , MOSFET , reliability , degradation , life estimation , radiation effects , silicon carbide , neutrons
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Paper In Conference Proceedings	In 2025 IEEE International Reliability Physics Symposium (IRPS 2025), Monterey, CA, USA, 30 Mar 2025 - 3 Apr 2025, (2025): 01-05.	doi:10.1109/IRPS48204.2025.10983267		2025