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Persistent URL http://purl.org/net/epubs/work/64436
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Record Id 64436
Title Nonresonant nonlinearity due to intersubband transitions in nonparabolic semiconductor quantum wells
Abstract We have calculated the contribution of intersubband transitions to the nonresonant third-order optical nonlinear susceptibility. It is shown that partial quantum confinement, rather than the band nonparabolicity, is responsible for high values of intersubband nonlinearity. The effects of finite barrier height, energy-band nonparabolicity, and energy-dependent effective mass are included. As examples, we consider InAs/AlSb, GaInAlAs/AlInAs, and GaAs/GaAlAs quantum wells.
Organisation CCLRC , ISIS
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Language English (EN)
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Journal Article J Appl Phys 90, no. 10 (2001): 5441-5443. doi:10.1063/1.1412264 2001