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Persistent URL http://purl.org/net/epubs/work/64478
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Record Id 64478
Title Intrinsic electron mobility in narrow Ga0.47In0.53As quantum well
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Abstract Electron mobility in Ga<sub>0.47</sub>In<sub>0.53</sub>As quantum wells is calculated for well widths between 2 and 10 nm and for the temperatures of 4.2, 77, and 300 K. Effects of the finite barrier height, energy-band nonparabolicity, mode confinement, electron screening, and degeneracy have been taken into account. The calculated values are found to be close to the experimental results for a well width of 10 nm. Effects of the composition of the barrier layer are also discussed.
Organisation ISIS , SERC
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Language English (EN)
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Journal Article Phys Rev B 48, no. 24 (1993): 17960-17966. doi:10.1103/PhysRevB.48.17960 1993
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