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Persistent URL http://purl.org/net/epubs/work/29452
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Record Id 29452
Title Low-energy grazing-angle argon ion irradiation of silicon at elevated temperatures: a viable option for cleaning?
Abstract In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (45° off-normal) argon-ion bombardment at mildly elevated target temperatures (~500 °C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (~1 nm) analytical techniques.
Organisation CCLRC , SND , MEIS
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Language English (EN)
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Journal Article Appl Phys Lett 76 (2000): 1887-1889. doi:10.1063/1.126201 2000