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Persistent URL http://purl.org/net/epubs/work/29455
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Record Id 29455
Title Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Abstract The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1×1015 and 5×1015 cm?2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
Organisation CCLRC , SND , MEIS
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Language English (EN)
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Journal Article J Vac Sci Technol B 18, no. 1 (2000): 435-439. doi:10.1116/1.591207 2000