The open archive for STFC research publications

You may experience service outages on ePubs over the coming days due to work being carried out to enhance our network infrastructure. The service should be considered at risk from 23/11 - 03/12.

Full Record Details

Persistent URL http://purl.org/net/epubs/work/29455
Record Status Checked
Record Id 29455
Title Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Abstract The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1×1015 and 5×1015 cm?2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
Organisation CCLRC , SND , MEIS
Funding Information
Related Research Object(s):
Licence Information:
Language English (EN)
Type Details URI(s) Local file(s) Year
Journal Article J Vac Sci Technol B 18, no. 1 (2000): 435-439. doi:10.1116/1.591207 2000