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Persistent URL	http://purl.org/net/epubs/work/29457
Record Status	Checked
Record Id	29457
Title	Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
Contributors	PR Chalker (Liverpool U.), D Morrice (Liverpool U.), TB Joyce (Liverpool U.), TCQ Noakes (CCLRC Daresbury Lab.), P Bailey (CCLRC Daresbury Lab.), L Considine (Thomas Swan)
Abstract	The long term stability of InGaN based light emitting- and laser-diodes is potentially compromised by phase separation and indium interdiffusion. Medium energy ion scattering has been used to investigate the diffusion of indium within In0.25Ga0.75N/GaN structures at 950°C. Comparison of the aligned and random ion scattering data for the as-deposited InGaN layer show that ca. 15% of the indium atoms are interstitial. Annealing at 950°C causes decomposition of the InGaN layer into InN and a range of lower indium content ternary phases.
Organisation	CCLRC , SND , MEIS
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	Diam Relat Mater 9, no. 3-6 (2000): 520-524.	doi:10.1016/S0925-9635(99)00259-9		2000