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Persistent URL http://purl.org/net/epubs/work/29457
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Record Id 29457
Title Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
Abstract The long term stability of InGaN based light emitting- and laser-diodes is potentially compromised by phase separation and indium interdiffusion. Medium energy ion scattering has been used to investigate the diffusion of indium within In0.25Ga0.75N/GaN structures at 950°C. Comparison of the aligned and random ion scattering data for the as-deposited InGaN layer show that ca. 15% of the indium atoms are interstitial. Annealing at 950°C causes decomposition of the InGaN layer into InN and a range of lower indium content ternary phases.
Organisation CCLRC , SND , MEIS
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Language English (EN)
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Journal Article Diam Relat Mater 9, no. 3-6 (2000): 520-524. doi:10.1016/S0925-9635(99)00259-9 2000