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Persistent URL http://purl.org/net/epubs/work/29466
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Record Id 29466
Title Implant temperature dependence of transient enhanced diffusion in silicon(100) implanted with low energy arsenic ions
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Abstract The diffusion of arsenic implanted into silicon at low ion energies (2.5 keV) has been studied with medium-energy ion scattering, secondary ion mass spectrometry and four-point probe measurements. The dopant redistribution together with the corresponding damage recovery and electrical activation produced by high-temperature (550–975°C) rapid thermal anneals has been investigated for a range of substrate temperatures (+25, +300 and ?120°C) during implant. Initial results show an implant temperature dependence of the damage structure and arsenic lattice position prior to anneal. Solid-phase epitaxial regrowth was observed following 550°C, 10 s anneals for all implant temperatures and resulted in approximately 60% of the implanted arsenic moving to substitutional positions. Annealing at 875°C resulted in similar arsenic redistribution for all implant temperatures. Following annealing at 925°C, transient-enhanced diffusion was observed in all samples with more rapid diffusion in the +25°C samples than either the ?120 or +300°C implants, which had similar dopant profiles. In the 975°C anneal range, similar rates of implant redistribution were observed for the +300 and +25°C implants, while diffusion in the ?120°C sample was reduced. These observations are discussed qualitatively in terms of the nature and density of the complex defects existing in the as-implanted samples.
Organisation CCLRC , SND , MEIS
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Language English (EN)
Type Details URI(s) Local file(s) Year
Journal Article Mater Sci Semicond Processing 3 (2000): 285-290. doi:10.1016/S1369-8001(00)00045-7 2000