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Persistent URL http://purl.org/net/epubs/work/29685
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Record Id 29685
Title A Macroscopic Evaluation of Heavily Irradiated Silicon Diode Material for Application in Silicon Detectors at LHC
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Abstract Using standard measurements of capacitance-voltage and current-voltage characteristics to determine depletion voltage, as well as measurement of the charge collection efficiency, several studies of macroscopic parameters of heavily irradiated silicon diodes have been made with relevance to the use of such diodes as particle detectors. It was observed that capacitance-voltage characteristics, and hence the extracted depletion voltage, were strongly dependent on measurement temperature and frequency. Annealing studies on the diodes gave results consistent with the presently accepted models describing these effects. Changes in charge collection efficiency observed during beneficial annealing were consistent with the model of electric field in the heavily irradiated diodes proposed by the Lancaster Group. Charge trapping appeared not to change during reverse annealing. We have found that defect engineered diodes in our study were no more radiation hard than standard silicon diodes. A parameterisation of the forward bias-current voltage characteristics has been proposed, relevant when considering the potential use of detectors operating in the unconventional forward bias mode.
Organisation CCLRC
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Language English (EN)
Type Details URI(s) Local file(s) Year
Thesis RAL Theses RAL-TH-1998-015. 1998. 1998
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