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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/30263
Record Status
Checked
Record Id
30263
Title
Damage of alumina films by medium energy hydrogen and helium ions
Contributors
P Bailey (CCLRC Daresbury Lab.)
,
TCQ Noakes (CCLRC Daresbury Lab.)
,
Y Liu (UMIST)
,
M Alexander (UMIST)
,
E Koroleva (UMIST)
,
G E Thompson (UMIST)
,
K Shimizu (Hokkaido)
,
H Habazaki (Keio)
,
P Skeldon
Abstract
Following previous observations of detachment of amorphous, anodic alumina films from aluminium by 100 keV H+ ions, further experiments have been carried out using H+, D+, 3He+ and 4He+ ions, at energies in the range of 0.5–270 keV, to irradiate anodized aluminium with oxides of thickness from 30 to 500 nm. Surface damage was investigated by field-emission-gun scanning electron microscopy and transmission electron microscopy. Detachment of the oxide, which takes place close to, or at, the metal/oxide interface, occurred only following irradiation by H+ and D+ ions, with the ions being stopped in the metal rather than the oxide. The threshold fluence for initiation of detachment is approximately 3×1015 ions cm?2. No detachment was detected following irradiations by 3He+ and 4He+ ions with fluences up to 5×1016 ions cm?2 and ranges similar to those of H+ and D+ ions, although vacancy production is much greater for helium ions. These findings indicate that detachment is associated with accumulation of hydrogen species in the vicinity of the metal/oxide interface, rather than condensation of vacancies. Such behaviour is consistent with the expected mobility of hydrogen, but not of helium, in aluminium near room temperature.
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Physics
Funding Information
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Licence Information:
Language
English (EN)
Type
Details
URI(s)
Local file(s)
Year
Journal Article
Nucl Instrum Meth B
197, no. 3-4 (2002): 265-270.
doi:10.1016/S0168-583X(02)01486-6
2002
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