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Persistent URL http://purl.org/net/epubs/work/30280
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Record Id 30280
Title Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
Abstract Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at.?%. Post deposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900?°C, 900?°C, internal oxidation of the silicon substrate had been inhibited. The capacitance–voltage characteristics of the films significantly improved following annealing in dry air.
Organisation CCLRC , SND , MEIS
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Language English (EN)
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Journal Article Appl Phys Lett 84, no. 20 (2004): 4119-4121. doi:10.1063/1.1755424 2004