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Persistent URL http://purl.org/net/epubs/work/30280
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Record Id 30280
Title Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
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Abstract Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at.?%. Post deposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900?°C, 900?°C, internal oxidation of the silicon substrate had been inhibited. The capacitance–voltage characteristics of the films significantly improved following annealing in dry air.
Organisation CCLRC , SND , MEIS
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Language English (EN)
Type Details URI(s) Local file(s) Year
Journal Article Appl Phys Lett 84, no. 20 (2004): 4119-4121. doi:10.1063/1.1755424 2004