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Persistent URL http://purl.org/net/epubs/work/30346
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Record Id 30346
Title Chemical bonding and structure of the sulfur treated GaAs(111)B surface
Abstract We have investigated the atomic structure and chemical bonding present at sulfur exposed GaAs(111)B-(2 × 2) surfaces using both scanning tunneling microscopy (STM) and synchrotron radiation core-level photoemission. Exposure of the (2 × 2) surface to a molecular beam of sulfur leads to the appearance of a (1 × 1) low-energy electron diffraction pattern which becomes increasingly well defined as the sample is annealed. However, at no stage of the annealing process does the surface display an ordered (1 × 1) ideal termination. Both the photoemission data and STM images show that a large proportion of the As trimer units of the clean (2 × 2) surface remain after sulfur exposure and annealing to 450 °C with strong evidence of sulfur substituting for As in atomic layers below the surface. The effect of these reactions is to increase the surface band-bending from that of the clean (2 × 2) surface.
Organisation CCLRC , SRS
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Language English (EN)
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Journal Article Appl Phys Lett 67, no. 3 (1995): 383-385. doi:10.1063/1.114636 1995