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Persistent URL
http://purl.org/net/epubs/work/32883
Record Status
Checked
Record Id
32883
Title
Damage profiles of ultra shallow B implants in Si and the Kinchin Pease relationship
Contributors
JA van den Berg (Salford U.)
,
G Carter (Salford U.)
,
DG Armour (Salford U.)
,
M Werner (Salford U.)
,
RD Goldberg (Applied Materials)
,
EJH Collart (Applied Materials)
,
P Bailey (CCLRC Daresbury Lab.)
,
TCQ Noakes (CCLRC Daresbury Lab.)
Abstract
Damage distributions resulting from 0.1–2keV 0.1–2keV B + B+ implantation at room temperature into Si(100) Si(100) to doses ranging from 1×10 14 1×1014 to 2×10 16 cm ?2 2×1016cm?2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B + B+ doses and energies investigated a 3–4nm 3–4nm deep, near-surface damage peak was observed while for energies at and above 1keV 1keV , a second damage peak developed beyond the mean projected B + B+ ion range of 5.3nm 5.3nm . This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B + B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)].
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Materials
Funding Information
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Language
English (EN)
Type
Details
URI(s)
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Year
Journal Article
Appl Phys Lett
85, no. 15 (2004): 3074-3076.
doi:10.1063/1.1801671
2004
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