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Persistent URL http://purl.org/net/epubs/work/36138
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Record Id 36138
Title Formation processes of chemically deposited copper sulfide thin films.
Abstract Thin copper sulfide films of the order were deposited onto glass microscope slides or single crystal silicon (1,1,1) substrates by chemical bath deposition (CBD). The same ratio of reagents was used throughout although the deposition temperature ranged between room temperature and 50 °C. The films have been characterised using Raman spectroscopy, infrared spectroscopy, electron microscopy, and neutron reflectance to determine. Freshly deposited films were shown to consist of two phases, a dense phase next to the substrate covered by a less dense phase. Following annealing, a the two phase are replaced by a single phase. Raman spectral data show that films contain S-S covalent bonding both before and after annealing. The physical incorporation of water into pre-annealed films has been demonstrated using neutron reflectometry and infra-red spectroscopy
Keywords Materials , Chemical Bath Deposition , Copper Sulfide , Thin Films , ISIS 2005
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Language English (EN)
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Paper In Conference Proceedings In Electrode Processes VII Proceedings of the international symposium, (2005). 2005
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