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Persistent URL http://purl.org/net/epubs/work/36872
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Record Id 36872
Title Anisotropic strain relaxation in a-plane GaN quantum dots
Abstract Medium energy ion scattering MEIS has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on 11?20 or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along 1?100 and a combination of plastic and elastic along 0001 . High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 0001 Burgers vector, consistent with MEIS data.
Organisation CCLRC , MEIS
Keywords Physics
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Language English (EN)
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Journal Article J Appl Phys 101 (2007): 063541, 1-7. doi:10.1063/1.2713937 2007