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Persistent URL	http://purl.org/net/epubs/work/36872
Record Status	Checked
Record Id	36872
Title	Anisotropic strain relaxation in a-plane GaN quantum dots
Contributors	S Founta (CEA-CNRS Group Grenoble), J Coraux (CEA-CNRS Group Grenoble), D Jalabert (CEA-CNRS Group Grenoble), C Bougerol (CEA-CNRS Group Grenoble), F Rol (CEA-CNRS Group Grenoble), H Mariette (CEA-CNRS Group Grenoble), H Renevier (CEA-CNRS Group Grenoble), B Baudin (Cambridge U.), CJ Humphreys (Cambridge U.), TCQ Noakes (CCLRC Daresbury Lab.), P Bailey (CCLRC Daresbury Lab.)
Abstract	Medium energy ion scattering MEIS has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on 11?20 or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along 1?100 and a combination of plastic and elastic along 0001 . High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 0001 Burgers vector, consistent with MEIS data.
Organisation	CCLRC , MEIS
Keywords	Physics
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	J Appl Phys 101 (2007): 063541, 1-7.	doi:10.1063/1.2713937		2007