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Persistent URL http://purl.org/net/epubs/work/50105
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Record Id 50105
Title Dielectric relaxation of lanthanum doped zirconium oxide
Abstract Lanthanum doped zirconium oxide Lax?Zr1−xO2− films, with La contents, up to x=0.35, were studied. Films were annealed at 900 °C to crystallize them into phases with higher -values. Increasing the La content suppressed the monoclinic phase and stabilized the tetragonal or cubic phase. The highest dielectric constant was obtained for a lightly doped film with a La content of x=0.09, for which a -value of 40 was obtained. This was accompanied by a significant dielectric relaxation, following a single Curie?von Schweidler power-law dependency with frequency, changing to a mixed Curie?von Schweidler and Kohlrausch?Williams?Watts relationships after annealing. The dielectric relaxation was most severe for lightly doped films, which had the highest -values. The dielectric relaxation appears to be related to the size of crystal grains formed during annealing, which was dependent on the doping level.
Organisation SRS , MEIS , STFC
Keywords Materials
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Language English (EN)
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Journal Article J Appl Phys 105 (2009): 044102. doi:10.1063/1.3078038 2009