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Persistent URL http://purl.org/net/epubs/work/50154
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Record Id 50154
Title Influence of deposition pressure and pulsed dc sputtering on pumping properties of Ti-Zr-V nonevaporable getter films
Contributors
Abstract The performance of a UHV vessel can be improved with a new CERN technology nonevaporable getter (NEG) coating, which is already widely used for accelerator vacuum chambers. Better understanding of the processes involved in NEG film deposition, activation, and poisoning should allow optimization and engineering of the film properties, which are necessary for a particular application. Ti–Zr–V NEG films were created by magnetron sputtering from a single Ti–Zr–V target, and the NEG performance and morphology dependence on depositionpressure,sputtering conditions, and substrate surface roughness have been investigated. It was found that the average grain size of the Ti–Zr–V film was 5–6 nm and was broadly independent of the substrate material and deposition conditions. However, film topography and density were shown to depend very much on the substrate surface roughness and deposition conditions. Rough substrates, high working pressures, and the absence of ion bombardment produced open columnar structures, whereas smooth substrates, ion assistance, and low pressures produced much denser layers. X-ray photoelectron spectroscopy studies have shown that full regeneration occurred at 300?°C but film activation started at temperatures of as low as 160?°C. The CO sticking probability reaches its maximum after activation at 250?°C and is found to be up to 0.3 with a pumping capacity in the range of 0.8–1.2 ML. The samples activated at 160?°C have a reduced pumping speed and capacity by an order of magnitude.
Organisation ASTeC , ASTeC-VS , CI , STFC
Keywords Physics , titanium alloys , grain size , surface roughness , vanadium alloys , metallic thin films , getters , sputter deposition , X-ray photoelectron spectra , zirconium alloys
Funding Information
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Language English (EN)
Type Details URI(s) Local file(s) Year
Journal Article J Vac Sci Technol A 27, no. 3 (2009): 521-530. http://scitation.…/3/10.1116/1.3112623 2009
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