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Persistent URL http://purl.org/net/epubs/work/51084
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Record Id 51084
Title Study of the activated GaAs surface for application as an electron source in particle accelerators
Abstract The use of Type III-V semiconductor materials as photocathodes has in recent years become a focus for the High Energy Physics community. Once activated to a Negative Electron Affinity (NEA) state and illuminated by a laser, these materials can be used as a high-brightness source of both polarised and un-polarised electrons in some modern accelerators, e.g., The ALICE (Accelerators and Lasers in Combined Experiments) at Daresbury Laboratory. This paper will focus on the use of Gallium Arsenide (GaAs) as a photocathode, and detail the re-configuration and re-commissioning of two vacuum systems that support standard surface science techniques such as Ultraviolet / X-ray Photoelectron Spectroscopy (UPS/XPS), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). The paper will present details of cleaning GaAs in order to maximise quantum efficiency and will provide evidence from XPS and LEED to demonstrate what is happening at the atomic level.
Organisation ASTeC , ASTeC-AP , ASTeC-VS , CI , STFC
Keywords ASTeC 2009-2010 , GaAs , XPS , Physics , LEED , NEA , Photocathode
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Language English (EN)
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Paper In Conference Proceedings Published by the AiP with the PESP08 submissions as part of the SPIN2008 proceedings AiP Conf. Proc 1149, pp 1022 -1026. Is in proceedings of: Polarised Electron Sources and Polarimetry (PESP08), Jefferson Lab, US, 4-8 Oct 2008. 2008 Proc PESP08…ted GaAs Surface.pdf 2008