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Persistent URL http://purl.org/net/epubs/work/52863
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Record Id 52863
Title InAs/GaSb(001) valence-band offset : independence of interface composition and strain
Abstract The InAs/GaSb(001) valence‐band offset is calculated for the two inequivalent GaAs‐like and InSb‐like interfaces and found to coincide to within ≊30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first‐principles calculations for intermixed interfaces. ¬© 1996 American Institute of Physics.
Organisation CCLRC , CSE , CSE-CMSG
Keywords Materials , InAs , GaSb , valence band offset , VBO
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Language English (EN)
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Journal Article Appl Phys Lett 69, no. 21 (1996). doi:10.1063/1.118015 1996