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Persistent URL http://purl.org/net/epubs/work/58471607
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Record Id 58471607
Title Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons
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Abstract
Organisation ISIS , STFC , ISIS-CHIPIR
Keywords neutron irradiation , proton irradiation , cosmic ray reliability , gate oxide reliability , trench Si JGBT
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Language English (EN)
Type Details URI(s) Local file(s) Year
Paper In Conference Proceedings In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2-6 Jun 2024, (2024): 60-63. doi:10.1109/ISPSD59661.2024.10579671 2024